A research team, led by Professor Joonki Suh in the Department of Materials Science and Engineering and the Graduate School of Semiconductor Materials and Devices Engineering at UNIST, has made a ...

ALD is based on the sequential use of a gas phase chemical process. The ALD cycle consists of four main steps: (1) pulsing of a precursor A, (2) purging of the reactor to remove excess precursor and ...

Layer deposition techniques have emerged as indispensable methods for constructing ultrathin films with precise control over thickness, composition and microstructure. Methods such as atomic layer ...

A team of international researchers has simplified the deposition of thin film layers in the commercial production of TOPCon solar cells. Via a tube-type industrial plasma-assisted atomic layer ...

A group of scientists from Hanyang University has published a report reviewing and discussing the outlook of atomic layer deposition (ALD) based oxide semiconductor thin film transistors (TFTs). The ...

Forge Nano, Inc., a technology company pioneering domestic battery and semiconductor innovations, today announced a breakthrough that fundamentally redefines the economics and architecture of advanced ...

High-speed hydrogen-free encapsulation using FCVA deposition improves OLED moisture barrier performance, preserves TFT stability, and nearly doubles flexible device lifetime compared with ALD.

Atomic layer deposition (ALD) originated from atomic layer epitaxy, which was introduced in 1970 and initially used in electroluminescent displays. It rapidly revolutionized semiconducting ...