CMOS reduces power consumption and board space by more than 30 percent San Jose, Calif.—Royal Philips Electronics today introduced its family of Advanced Ultra-low Power (AUP) CMOS logic, featuring ...
Advanced CMOS process technologies enable IC designers to deliver higher performing devices, but also increase the need for extra board-level ESD protection to ensure the reliability of the end ...
The market for CMOS image sensors (CIS) is projected to grow with a Compound annual growth rate (CAGR) of 7 to almost 9% in the next 5 years. According to researchers it will reach a total yearly ...
GISTEL, Belgium & MIGDAL HAEMEK, Israel -- July 11, 2007 -- Sarnoff Europe and Tower Semiconductor today announced that Tower Semiconductor has licensed Sarnoff Europe's TakeCharge® electrostatic ...
AUSTIN, Texas--(BUSINESS WIRE)--The Silicon Integration Initiative Compact Model Coalition is proud to announce the release of the ASM-ESD diode model, a new electrostatic discharge compact modeling ...
Electronic design automation (EDA) verification of electrostatic discharge (ESD) protection is a complex task. Different integrated circuit (IC) design companies use different ESD protection ...
Electrostatic discharge (ESD) protection is an essential facet in the design and operation of modern integrated circuits (ICs). As electronic devices become increasingly miniaturised and complex, ...
Electrostatic discharge (ESD) protection is critical at advanced nodes to safeguard designs against effects intensified by shrinking transistor dimensions and oxide layer thicknesses. On the other ...
The sheer volume of automotive electronics in today’s cars is dramatically driving up the transmission requirements and data payload on automotive networks, writes Lukas Droemer of Nexperia. To take ...
(Nanowerk News) At this week’s IEEE IEDM conference, world-leading research and innovation hub for nano-electronics and digital technology, imec, reported for the first time the CMOS integration of ...
Imec has achieved the CMOS integration of vertically stacked gate-all-around (GAA) silicon nanowire MOSFETs. Key in the integration scheme is a dual-work-function metal gate enabling matched threshold ...
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