“Conventional resistive crossbar array for in-memory computing suffers from high static current/power, serious IR drop, and sneak paths. In contrast, the “capacitive” crossbar array that harnesses ...

(Nanowerk News) Shigeki Sakai and others of Ferroelectric Memory Group, the Nanoelectronics Research Institute of the National Institute of Advanced Industrial Science and Technology (AIST), have ...

Compute-in-memory (CiM) has become an attractive computing paradigm to address the memory and power walls in traditional designs for deep learning applications. With CiM, part of the computation ...

Researchers are zeroing in on new architectures to boost performance by limiting the movement of data in a device, but this is proving to be much harder than it appears. The argument for memory-based ...

The race is on for a successor to the popular ‘flash’ memory used in portable devices. Researchers think they have found a candidate in novel materials combined with a simple, easily fabricated ...

A laboratory working on next-generation "flash" memory technology has demonstrated a 1-kilobit silicon oxide memory chip with embedded diodes that keep voltage from leaking and corrupting data. A Rice ...

Resistive memory array with cross-point structure has great potential for high-density information storage and large-scale neural networks. However, the crosstalk caused by the leakage current flowing ...