“Conventional resistive crossbar array for in-memory computing suffers from high static current/power, serious IR drop, and sneak paths. In contrast, the “capacitive” crossbar array that harnesses ...

(Nanowerk News) Shigeki Sakai and others of Ferroelectric Memory Group, the Nanoelectronics Research Institute of the National Institute of Advanced Industrial Science and Technology (AIST), have ...

In a new Nature Communications study, researchers have developed an in-memory ferroelectric differentiator capable of performing calculations directly in the memory without requiring a separate ...

Researchers are zeroing in on new architectures to boost performance by limiting the movement of data in a device, but this is proving to be much harder than it appears. The argument for memory-based ...

A laboratory working on next-generation "flash" memory technology has demonstrated a 1-kilobit silicon oxide memory chip with embedded diodes that keep voltage from leaking and corrupting data. A Rice ...

SANTA CLARA, CA – AUGUST 5, 2013 – Emerging from stealth-mode today, Crossbar, Inc., a start-up company pioneering a new category of very high capacity and high-performance non-volatile memory, ...