The MB85RC64 is a FRAM (Ferroelectric Random Access Memory) Stand-Alone chip in a configuration of 8,192 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for ...
Ferroelectric random access memory, or FeRAM, has long promised to offer a low-power alternative to flash computer memory, but its limited endurance cannot offset its deficiency in density such that ...
The MB85R1001A is an FRAM (Ferroelectric Random Access Memory) chip consisting of 131,072 words x 8 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS ...
Offered as the first in a line of Problem Solver Memories, the FM3808 of ferroelectric random access memory (FRAM) chip combines a 256 Kb nonvolatile FRAM memory with a real-time clock and ...
Introduced as the first nonvolatile memory to feature unlimited endurance, the 256-Kb, 3V FM18L08 ferroelectric random access memory (FRAM) offers an unlimited number of read and write ...
Coughlin Associates and Objective Analysis released their 2024 report on emerging non-volatile memories, A Deep Look at New Memories. These memories include magnetic random access memory, MRAM; ...
A new technical paper titled “Benchmarking of FERAM-Based Memory System by Optimizing Ferroelectric Device Model” was published by researchers at Georgia Tech, imec and National Technical University ...
This article covers some more interesting content from the 2021 IEEE IEDM and the MRAM Forum that followed the IEDM. We look at some papers from the conference covering magnetic random-access memory ...
A new technical paper titled “Toward Capacitive In-Memory-Computing: A Device to Systems Level Perspective on the Future of Artificial Intelligence Hardware” was published by researchers at Tampere ...
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