This application note presents the ISL73096RH/ISL73127RH/ISL73128RH transistor arrays and focuses on designing RF amplifiers employing these featured transistor ...
A new technical paper titled “Record RF Performance of Ultra-thin Indium Oxide Transistors with Buried-gate Structure” was published by researchers at Purdue University and won the 2022 Device ...
Designing highly integrated components for radio frequency applications poses special challenges for system engineers, designers and the commissioning engineers. The boundary between chip, package and ...
Power-Amplifier (PA) and base-station manufacturers are faced with a series of similar problems. They both have a common interest in keeping base stations cool and minimizing cost. And they each have ...
RF product manufacturer and foundry services provider, TriQuint Semiconductor has announced the availability of a new high power discrete RF transistor family for broadband applications including ...
High-power broadcast-TV transmitter design should become easier with the MRF6P3300H enhancement-mode MOSFET. Designed for use in TV transmitters of 1, 5, and 10 kW, it can dissipate up to 300 W. It's ...