Seeking Alpha

ROHM’s New Schottky Barrier Diodes Achieve Class-Leading Reverse Recovery Time with 100V Breakdown Voltage by Adopting a Trench MOS Structure that Significantly Improves VF ...

Santa Clara, CA and Kyoto, Japan, Feb. 15, 2024 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced new 100V breakdown Schottky Barrier Diodes (SBDs) that deliver industry-leading[1] reverse ...
EDN

600-V MOSFETs pack fast recovery diode

Two 600-V N-channel super-junction MOSFETs from Alpha & Omega incorporate a body diode for robustness and fast reverse recovery. Based on the company’s aMOS5 technology, the AOK095A60FD (TO-247) and ...
Electronic Design

Low-Profile 1-A Rectifiers Boast 25-ns Reverse Recovery Time

A series of low-profile, surface-mount 1-A rectifiers have a 100- to 200-V voltage range and 25-ns reverse recovery time for high-frequency applications. The MUH1Px series offers designers a choice of ...
Electronic Design

Reverse Recovery

The figure shows what happens to the diode in the boost converter presented in Figure 1. When the diode turns on, there's an overshoot due to the higher resistance of the n­ region, relative to the ...