Design-Reuse

Renesas Electronics Announces Development of New SRAM Circuit Technologies to Reduce Adverse Impacts of Random Variability in Scaled-down LSI Devices

TOKYO, Japan, July 13, 2010--Renesas Electronics Corporation (TSE: 6723) todayannounced the successful demonstration of new SRAM circuit technologies that reduces the adverse impacts of increased ...
Design-Reuse

Renesas Technology Develops Promising Technology for Implementing On-Chip SOI SRAM of 32-Nanometer Generation and Beyond

Tokyo, June 12, 2007 −− Renesas Technology Corp. today announced the development of a technology that is effective in implementing SRAM in processes of the 32 nm (nanometer) generation and beyond, for ...
EDN

STMicro hardens embedded SRAM against soft errors

GENEVA, Switzerland — European chip maker STMicroelectronics claimed Monday (December 15, 2003) to have redesigned the SRAM cell to eliminate so-called “soft errors”, a problem that had been expected ...