IEEE IEDM 2025 | 42-6 | Silicon-on-Insulator Pixel FinFET ...
Dec 6, 2010 · The application of SOI FinFETs as pixel transistors, featuring a body-less configuration on buried oxide, reduces parasitic capacitance at the floating diffusion node, thereby enhancing …
9-8 | High-Performance IGZO-based DrMOS with Vertical Channel ...
Dec 6, 2010 · We demonstrate the first BEOL-compatible DrMOS using vertical-channel oxide semiconductor power transistors for monolithic 3D (M3D) integrated active power delivery network …
We demonstrated that the capacitance was increased due to the Cu-Cu bonding pad and the formation of DCNT in the 3-stack structure, and it makes the reduced conversion gain. It was also verified that …
33-1 | High-Efficiency BEOL-Compatible On-Chip Switched ...
Dec 6, 2010 · This work presents a breakthrough in on-chip point-of-load (PoL) DC-DC voltage conversion for heterogeneous 3D integrated circuits by leveraging BEOL-compatible transistor and …
13-7 | Using Nonlinear CMOS-MEMS Resonators for Self ...
Dec 6, 2010 · 13-7 | Using Nonlinear CMOS-MEMS Resonators for Self-Encrypting Analog-to-Digital Conversion Originally Aired - Tuesday, December 9 Continental 1-3
IEEE IEDM 2025 | 9-2 | Progress Towards Demonstration of ...
Dec 6, 2010 · Here, we report recent progress towards the development and performance of lateral Ga2O3 field effect transistors for power conversion applications. Further, we investigate device …
IEEE IEDM 2025 | 42-8 | A 2-layer, 0.7μm-pitch Dual ...
Dec 6, 2010 · We integrated 2-layer pixel with hybrid Cu-Cu bonding process only, without introducing pixel-level deep contacts. By optimizing layout of Cu pad layer, we suppressed capacitive coupling …